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| 2010. 8. 20 1/6 semiconductor technical data KF4N20LD/i n channel mos field effect transistor revision no : 0 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for led lighting and switching mode power supplies. features h v dss(min.) = 200v, i d = 3.6a h drain-source on resistance : r ds(on) =1.05 ? (max) @v gs =10v h qg(typ.) =2.9nc h v th(max.) = 2v maximum rating (tc=25 ? ) * : drain current limited by maximum junction temperature. characteristic symbol rating unit drain-source voltage v dss 200 v gate-source voltage v gss ? 20 v drain current @t c =25 ? i d 3.6 a @t c =100 ? 2.2 pulsed (note1) i dp 7* single pulsed avalanche energy (note 2) e as 52 mj repetitive avalanche energy (note 1) e ar 3 mj peak diode recovery dv/dt (note 3) dv/dt 5.5 v/ns drain power dissipation t c =25 ? p d 31 w derate above25 ? 0.25 w/ ? maximum junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? thermal characteristics thermal resistance, junction-to-case r thjc 4.0 ? /w thermal resistance, junction-to- ambient r thja 110 ? /w dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j 1. anode 2. cathode 3. anode ipak(1) 123 a a b b c c d d e e f ff g g h h j j l l 0.96 max k m p m n p n k 6.6 0.2 + _ 6.1 0.2 + _ 5.34 0.3 + _ 0.7 0.2 + _ 9.3 0.3 + _ 2.3 0.2 + _ 0.76 0.1 + _ 2.3 0.1 + _ 0.5 0.1 + _ 1.8 0.2 + _ 0.5 0.1 + _ 1.0 0.1 + _ + _ 1.02 0.3 dim millimeters 1. anode 2. cathode 3. anode pin connection KF4N20LD kf4n20li
2010. 8. 20 2/6 KF4N20LD/i revision no : 0 electrical characteristics (tc=25 ? ) note 1) repetivity rating : pulse width limited by junction temperature. note 2) l = 78mh, i s =1a, v dd =50v, r g = 25 ? , starting t j = 25 ? . note 3) i s ? 2a, di/dt ? 300a/ k , v dd ? bv dss , starting t j = 25 ? . note 4) pulse test : pulse width ? 300 k , duty cycle ? 2%. note 5) essentially independent of operating temperature. kf4n20lw ld kf4n20lw li marking d4cdyl4y lra- 4cl4 akdy4yak ryki 4i ri ky4 static degrllaoepu eugkahl a/ngmu dll y d se 1 , 5 /, 2 2 , = b&#,$ % ! 8 "" =, + : ( + /3 1 " &3 ? 2 2 , ? + 8!2""8! ( + , + /, , 5 /, 2 2 1 5 &,$ , , + /, 5 ( + /3 1 2 , 5 * b$ 8! ( 5 , 5 / ? , , + /, 2 2 ? 1 + 2! +-. , 5 /, ( + /1 2 3 3 ? , 5 /3, ( + /1 7 dynamic 4ang/ gnu 2gemu m dl met y d in l kanut si ic l gnulaoepu 2gemu mh ein gnudegrl 2gemu mk sis 4oelal du/gu nrpu n kal dd meet y d in d s ? - d 3. , 5 /3, 2 2 !2 % 2 2 !2""+ ) % &-"". 2 3 2 !2"" % " 2 3 2 (!8 8 , + /3, , 5 /, "/;h 2 @ !!8 8 2 3 2 " 8 8 2 d 2 source-drain diode ratings alnrloaoh laoepu oeeuln y l l n2 m o/huk laoepu oeeuln y l draku saehgek a/ngmu ld y l mt l e mi dutuehu dupatueu 4rpu n ee y l int l et kyhoknmeeo k 2 2 )8$ 6 2 0 2 8 2010. 8. 20 3/6 KF4N20LD/i revision no : 0 v gs = 3v 0 3.0 2.5 2.0 1.5 1.0 0.5 246 6 8 2010. 8. 20 4/6 KF4N20LD/i revision no : 0 drain current i d (a) gate - charge q g (nc) drain - source voltage v ds (v) fig8. q g - v gs fig9. safe operation area gate - source voltage v gs (v) 10 10 10 0.1 1 1 1 0.01 100 1000 0 2 1 5 4 3 75 150 125 50 100 025 drain current i d (a) c junction temperature t j ( ) fig10. i d - t j t c = 25 t j = 150 single pulse c c fig 7. c - v ds drain - source voltage v ds (v) capacitance (pf) 1 10 100 1000 0 5 15 25 35 10 20 30 40 c rss c oss c iss dc 10ms 1ms 100 s operation in this area is limited by r ds(on) 0 12 10 6 2 4 8 78 3 1 5 4 6 2 0 i d =4a v ds = 40v v ds = 160v 10 s time (sec) fig11. transient thermal response curve transient thermal resistance 10 -3 10 -2 10 -1 10 0 10 -4 0.1 10 1 single puls e dut y =0.5 0.02 0.05 0. 10 0.20 0.01 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm 2010. 8. 20 5/6 KF4N20LD/i revision no : 0 fig12. gate charge i d v ds v gs v gs v ds v gs 1.0 ma r l 10v 5 v 25 ? r l q g q gd q gs q t p fig14. resistive load switching fig13. single pulsed avalanche energy v ds (t) i d (t) v ds v gs 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% 50v 0.8 v dss 0.5 v dss 2010. 8. 20 6/6 KF4N20LD/i revision no : 0 fig15. source - drain diode reverse recovery and dv /dt l i s v ds v sd i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm 0.5 v dss |
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